The electronic properties of transition metal hydrogen complexes in silicon
نویسندگان
چکیده
The electrical levels of various combinations of transition metal-H defects in Si are calculated using spin-polarised local density functional cluster theory with an empirical correction. The shifts of these levels with H can be understood through a displacement and splitting of the gap manifold of states due to the impurity. Passive defects are identified.
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تاریخ انتشار 1998